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SM05T1 Series
Preferred Device
Transient Voltage Suppressor Diode Array
SOT-23 Dual Common Anode Zeners for ESD Protection
These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Specification Features: http://onsemi.com
PIN 1. CATHODE 2. CATHODE 3. ANODE
1 3 2
* SOT-23 Package Allows Either Two Separate Unidirectional * * * *
Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range - 5.0 V to 12 V Peak Power - 300 Watt (8 X 20 ms) Low Leakage Flammability Rating UL 94 V-0
1 2
3
MARKING DIAGRAM
5M
SOT-23 CASE 318 STYLE 12 5M M = Device Code = Date Code
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel.
ORDERING INFORMATION
Device SM05T1 SM12T1 Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2003
1
June, 2003 - Rev. 0
Publication Order Number: SM05T1/D
M
SM05T1 Series
MAXIMUM RATINGS
Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT) IEC 61000-4-5 (Lightening) Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) 1. Non-repetitive current pulse per Figure 3 2. FR-5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *Other voltages may be available upon request PD RJA PD RJA TJ, Tstg TL Air Contact Symbol Ppk Value 300 15 8.0 40 12 225 1.8 556 300 2.4 417 - 55 to +150 260 Unit Watts kV A A mW mW/C C/W mW mW/C C/W C C
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK VC VBR VRWM IF
I
IR VF IT
V
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS
VBR, Breakdown Voltage VRWM Device SM05T1 SM12T1 Device Marking 5M 12M (Volts) 5 12 IR @ VRWM (mA) 10 1.0 Min 6.2 13.3 (Volts) Max 7.3 15.75 IT mA 1.0 1.0 VC @ IPP = 1 Amp (Volts) 9.8 19 Typical Capacitance (pF) Pin 1 to 3 @ 0 Volts 225 95
Max IPP (Note 4) (Amps) 17 12
4. 8 x 20 ms pulse waveform per Figure 3
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2
SM05T1 Series
TYPICAL CHARACTERISTICS
10 PPP, PEAK PULSE POWER (kW) PD, POWER DISSIPATION (mW) 300 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 0.1 1 100 10 tp, PULSE DURATION (ms) 1000 0 25 50 75 100 125 TEMPERATURE (C) 150 175
1
0.1
0.01
Figure 1. Non-Repetitive Peak Pulse Power versus Pulse Time
Figure 2. Steady State Power Derating Curve
100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 tP tr
PEAK VALUE IRSM @ 8 ms C, CAPACITANCE (pF) PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms
250
210
170
130
90 0 20 40 t, TIME (ms) 60 80 0 1 2 3 BIAS VOLTAGE (VOLTS) 4 5
Figure 3. 8 x 20 ms Pulse Waveform
Figure 4. Typical Diode Capacitance (SM05)
100 90 C, CAPACITANCE (pF) 80 70 60 50 40 30 20 10 0 0 1 5 8 BIAS VOLTAGE (VOLTS) 12
Figure 5. Typical Diode Capacitance (SM12) http://onsemi.com
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SM05T1 Series
TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT-23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below.
Computer Interface Protection
A KEYBOARD TERMINAL PRINTER ETC. B I/O C D FUNCTIONAL DECODER
GND SM05T1 Series
Microprocessor Protection
VDD VGG ADDRESS BUS RAM ROM
DATA BUS I/O
CPU CLOCK
SM05T1 Series
CONTROL BUS
GND SM05T1 Series
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4
SM05T1 Series INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C = 225 milliwatts 556C/W
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad(R). Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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SM05T1 Series
PACKAGE DIMENSIONS
SOT-23 TO-236AB CASE 318-08 ISSUE AH
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08.
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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SM05T1/D

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